Sensing in the autonomous transport & delivery domain is an exciting field in that it covers such a broad spectrum of things to sense and ways of sensing. MEMS alone based mostly on silicon - but also increasingly on piezo materials - already cover a wide range of applications like high precision pressure sensors for barometers and altimeters, ultrasonic transducers and sonars for 3D sensing as well as inertial sensors for reliable indoor/outdoor positioning systems and navigation assistance. In the field of photonics too, sensing covers an extremely rich domain going from image sensors in the of visible or SWIR spectrum to LiDARs, including 3D short range/long range sensing systems just to give a few examples. This large diversity is also calling for competitive solutions for high quality electronic materials enabling optimum PPAC (power, performance, area and cost) figures. In this paper, we will review new developments of engineered substrates for sensing for applications such as autonomous transport & delivery, including thin film piezo on silicon, thin film silicon on cavities and large diameter (200-300mm) III-V materials like InP on silicon substrates.
Bruno GHYSELEN holds a PhD in Materials science obtained from University Paris 7. During his thesis, he focused on Josephson junctions. This work was realised within THOMSON-CSF/ Laboratoire Central de Recherches (now within THALES). He pursued this collaborative work by joining as a research associate the University of Cambridge (UK/ Mat. Sci. Dept). He joined SOITEC mid 1995, just before SOITEC revealed its new Smart Cut technology dedicated to the manufacturing of a new generation of SOI substrates. Within SOITEC, he has been in charge of different R&D programs and collaborations (wafer suppliers, SOITEC customers, equipment suppliers, Universities, R&D public organizations ..). Most of these programs were dedicated to the development of advanced SOI and other advanced composite substrates for specific applications, like for instance MEMS applications in general (including cavity SOI and thin film piezo) and also on the heterogeneous integration of III-V materials on silicon platforms.