Power electronics is increasingly adopting wide bandgap technology. Gallium nitride (GaN) has a wide bandgap of 3.4 eV and superior electronic properties, enabling the development of high mobility power devices that increase power density and efficiency in competitive power electronics. GaN has become one of the most promising technologies to revolutionize the future power electronics field, with several use cases for power switching applications already available.
With more than 30 years in the semiconductor industry, Eric has served different roles with various responsibilities from product definition, and design to testing and applications for analog, mixed-signal and power components. He was instrumental in the development of high- to low-voltage devices, low- to high-power switches and advanced pre-drivers as well as a diverse combination of smart low- and high-side drivers for actuators/motor controls and controllers including advanced ASIL D System Basis Chips for safety-critical microcontrollers.